NPT1010 NPT1010 page 1 features ? optimized for broadband operation from dc C 2000mhz ? 100w p 3db cw power at 900mhz ? 60-95 w p sat cw power from 500-1000mhz in broadband application design ? high effciency from 14 - 28v ? 1.4 c/w r th with maximum t j rating of 200 c ? robust up to 10:1 vswr mismatch at all phase angles with no damage to the device ? subject to ear99 export control dc C 2000 mhz 14 C 28 volt gan hemt gallium nitride 28v, 100w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology rf specifcations (cw, 900mhz): v ds = 28v, i dq = 700ma, t a = 25c, measured in nitronex test fixture symbol parameter min typ max units p 3db average output power at 3db gain compression 49.0 50.0 - dbm p 1db average output power at 1db gain compression - 49.0 - dbm g ss small signal gain 18.7 19.7 - db h drain effciency at 3db gain compression 57 64 - % vswr 10:1 vswr at all phase angles no damage to the device figure 1 - typical cw performance in load-pull, v ds = 28v, i dq = 700ma figure 2 - typical cw performance in load-pull, v ds = 28v, i dq = 700ma nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 2 symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 36ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - 9 18 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 36ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 700ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 270ma) - 0.13 0.14 w i d,max drain current (v ds = 7v pulsed, 300 m s pulse width, 0.2% duty cycle) 19.0 21.0 - a symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v i g gate current 180 ma p t total device power dissipation (derated above 25c) 125 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1b (>500v) mm machine model esd rating (per jesd22-a115) class a (200v) cdm charge device model esd rating (per jesd22-c101) iv (>1000v) dc specifcations: t a = 25c symbol parameter min typ max units q jc thermal resistance (junction-to-case), t j = 180 c - 1.4 - c/w thermal resistance specifcation absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 3 frequency (mhz) z s (w) z l (w) p sat (w) g ss (db) drain effciency @ p sat (%) 500 2.8 + j2.2 2.7 + j2.0 100 24.5 71% 900 1.1 - j0.5 1.9 + j0.6 100 21.0 70% 1500 1.1 - j3.6 2.0 - j1.2 100 17.0 63% 2000 1.1 - j4.9 1.9 - j3.8 89 14.5 59% load-pull data, reference plane at device leads v ds =28v, i dq =700ma, t a =25c unless otherwise noted 73% 49dbm figure 3 - o p t i m u m i m p e d a n c e s f o r c w performance. z 0 = 5 figure 4 - l o a d - p u l l c o nt o u r s , 5 0 0 m h z, p in = 27dbm, z s = 2.8 + j2.2 68% 49dbm figure 5 - l o a d - p u l l c o n t o u r s , 9 0 0 m h z , p in = 32.5dbm, z s = 1.1 - j0.5 table 1: optimum source and load impedances for cw gain, drain effciency, and output power performance z s is the source impedance presented to the device. z l is the load impedance presented to the device. nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 4 53% 48.5dbm 63% 48.5dbm figure 6 - lo ad - pull c o nto ur s, 15 0 0 m hz, p in = 29dbm, z s = 1.1 - j3.6 figure 7 - lo a d - pu l l c o nto u r s , 2 0 0 0 m h z, p in = 36dbm, z s = 1.1 - j4.9 figure 8 - typical cw performance over voltage in load-pull, 900mhz figure 9 - typical cw per formance over temperature in nitronex test fixture, 900mhz figure 10 - quiescient gate voltage (v gsq ) required to reach i dq as a function of ambient temperature, v ds = 28v figure 11 - mttf of nrf1 devices as a function of junction temperature load-pull data, reference plane at device leads v ds =28v, i dq =700ma, t a =25c unless otherwise noted. nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 5 rf performance in 500-1000mhz broadband application circuit v ds =28v, i dq =700ma, t a =25c unless otherwise noted figure 12 - photograph of 500-1000mhz broadband application circuit for NPT1010 figure 13 - c w pe r f o r m a n c e i n b r o a d b a n d circuit. measurements (symbols) are connected by a smoothing function (25 c) figure 14 - cw drive up curves in broadband circuit. figure 15 - c w pe r f o r m a n c e i n b r o a d b a n d circuit. measurements (symbols) are connected by a smoothing function (100 c) figure 16 - cw performance in broadband circuit at different output powers connected by a smoothing function nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 6 frequency (mhz) p sat (dbm) p sat (w) drain effciency @ p sat (%) g ss (db) t j , rise (c) 1 500 48.9 77.8 60 18.1 76 550 49.3 84.9 65 17.4 66 600 49.8 94.8 69 16.6 63 650 48.3 68.2 63 16.1 59 700 48.1 63.8 56 15.5 73 750 48.0 63.1 55 15.1 76 800 49.4 86.9 63 15.1 76 850 49.7 92.5 66 15.4 71 900 50.0 98.9 66 15.7 74 950 49.0 79.4 69 16.0 53 1000 48.3 67.1 67 16.0 49 rf performance in 500-1000mhz broadband application circuit v ds =28v, i dq =700ma, t a =25c unless otherwise noted note 1: temperature rise is from junction to case and is calculated from the dissipated power using an r th value of 1.4c/w figure 17 - input and output return loss of the 500-1000mhz broadband application circuit, p in = -5dbm table 2: power, gain, effciency and temperature rise across frequency in the 500-1000mhz appli - cation circiut nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 7 figure 18 - schematic of 500-1000mhz application board for NPT1010 ??????????????????????????????????????????????????? ???????? ???? ????? ????????? ???? ?????? ????????????? ?????????? ???? ??? ????? ?? ????????? ??? ??????????? ? ?? ????? ?? ????????? ??? ??????????? ? ?????? ??? ??? ???? ??????? ????????????? ????????????? ?????? ???? ??? ???? ??????? ???????????????? ??????????? ?? ?????? ????? ?? ???? ??????? ?????????????? ????????????? ?? ????? ??? ????????? ???????? ??????????? ??????????? ??? ????? ??? ????????? ??????????????? ???????????????? ??? ??????????? ???????? ???? ?? ????????? ??? ??????????? ? ???????? ????? ?? ????????? ??? ??????????? ??? ???? ?? ????????? ??? ??????????? ?????? ???? ?? ??? ??????? ???????????? ?????????? ?????? ??? ?? ???? ??????? ???????????????? ????????????? ???? ?? ???? ?? ??? ????????? ????????????? ? ?? ? ???????????? ???????????????????????? ???????????????????????? ? ??????????????? ? ?? ?????????????? ???????????????? ????????? ? ??????????? ???????? ?????? ? ??????????? ?? ??????? ????????????? ?? ?? ??? ??????????????????????????????? ???????????? layout of 500-1000mhz application board for NPT1010 nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 8 name value tolerance size vendor vendor number c1 100pf 5% .11"x.11" atc atc100b101j c2 100pf 5% .11"x.11" atc atc100b101j c3, c6 1.0uf 10% 1812 avx corp 18121c105kat2a c4, c7 0.1uf 10% 1206 kemet c1206c104k1ractu c5, c8 0.01uf 1% 1206 avx corp 12061c103kat2a c9 150uf 20% 3216(eia) nichicon upw1c151med c10 270uf 20% 10mm(dia) united chmi-con elxy 630ell271mk25s c11, c12 56pf 1% .11"x.11" atc atc100b560j c14, c15 4.7pf 1% .11"x.11" atc atc100b4r7j c13 15pf 1% .11"x.11" atc atc100b150j r1 10 ohms 5% 805 panasonic erj-6enf10r0v r2, r3 0.33 ohms 1% 805 panasonic erj-6rqfr33v r4, r5 7.5 ohms 1% 2512 stackpole electron - rhc 2512 10 1% r l1 12nh 5% 805 coilcraft 0805cs-120xjb l2 4 turn, 16g, 0.2"id copper wire n connector amphenol 172195 nbd-079_rev1 rogers rogers 6010lm 25mil, 1oz, r = 10.2 copper heatsink bnc connectors tyco electronics 1052566-1 metric 18-8 ss socket head cap screw m2.5 thread, 8mm length, 0.45mm pitch mcmaster carr 91292a012 table 3: NPT1010 500-1000mhz application board build of materials nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 9 figure 20 - ac360b-2 metal-ceramic package dimensions and pinout (all dimensions are in inches [mm]) ordering information 1 part number description NPT1010b NPT1010 in ac360b-2 metal-ceramic bolt-down package 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com nds-023 rev. 3, april 2013
NPT1010 NPT1010 page 10 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-023 rev. 3, april 2013
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